lx5503e p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 1 www. microsemi . com ingap hbt 4 ? 6ghz power amplifier integrated products copyright ? 2000 rev. 1.2, 2004-01-16 description the lx5503e is a power amplifier optimized for high-efficiency low- power applications in the fcc unlicensed national information infrastructure (u-nii) band, europe hyperlan2, and japan wlan in the 4.9-5.85ghz frequency range. the pa is implemented as a two-stage monolithic microwave integrated circuit (mmic) with active bias and input/output pre-matching. the device is manufactured with an ingap/gaas heterojunction bipolar transistor (hbt) ic process (mocvd). it operates at a single supply of 3.3v with +26dbm of p1db, and power gain of 21db between 4.9-5.35ghz and 16db up to 5.85ghz. for +18dbm ofdm output power (64qam, 54mbps), the pa provides a very low evm (error vector mag- nitude) of 3%, and consumes 150ma total dc current. the lx5503e is available in a 16- pin 3x3mm 2 micro-lead package (mlp). the compact footprint, low profile, and excellent thermal capability of the micro-lead package make the lx5503e an ideal solution for broadband, medium-gain power amp- lifier requirements for ieee 802.11a, and hiperlan2 portable wlan applications. important: for the most current data, consult microsemi ?s website: http://www.microsemi.com key features ? advanced ingap hbt ? 4.9-5.85ghz operation ? single-polarity 3.3v supply ? total current ~ 150ma for pout=18dbm at 5.25ghz ? p1db ~ +26dbm across 4.9~5.85ghz ? power gain ~ 21db at 5.25ghz & pout=18dbm ? power gain ~ 16db at 5.85ghz & pout=18dbm ? evm ~ 3% for 64qam/ 54mbps & pout=18dbm ? excellent temperature performance ? simple input/output match ? minimal external components ? optional low-cost ldo for optimal system performance ? small footprint: 3x3mm 2 ? low profile: 0.9mm applications/benefits ? fcc-unii wireless ? ieee 802.11a ? hiperlan2 product highlight package order info lq plastic mlpq 16-pin lx5503e-lq note: available in tape & reel. append the letter ?t? to the part number. (i.e. lx5503e-lqt) l l x x 5 5 5 5 0 0 3 3 e e
lx5503e p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 2 www. microsemi . com ingap hbt 4 ? 6ghz power amplifier integrated products copyright ? 2000 rev. 1.2, 2004-01-16 absolute maximum ratings dc supply voltage, rf off ...............................................................................6v collector current ........................................................................................500ma total power di ssipation....................................................................................3w rf input power........................................................................................... 10dbm operation ambient temper ature .......................................................-40 to +85c maximum junction temperature (t jmax ) .................................................... 150c storage temperatur e.......................................................................... -60 to 150c note: exceeding these ratings could cause damage to the device. all voltages are with respect to ground. currents are positive into, negative out of specified terminal . package pin out 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 lq p ackage (bottom view) functional pin description name pin # description rf in 2, 3 rf input for the power amplifier. this pin is dc- shorted to gnd but ac-coupled to the transistor base of the first stage. vb1 6 bias current control voltage for the first stage. vb2 7 bias current control voltage for the second stage. t he vb2 pin can be connected with vb1 into a single reference voltage (vref) through an external resistor bridge. vcc 9 supply voltage for the bias reference and control ci rcuits. this pin can be combined with both vc1 and vc2 pins, resulting in a single supply voltage (referred to as vc). rf out 10, 11 rf output for the power amplifier. this pin is ac-coupled and does not require a dc-blocking capacitor. vc1 15 power supply for first stage amplifier. the vc1 feedline should be terminated with a 220pf bypass capacitor as close to the device as possible, followe d by a 1f bypass capacitor at the supply side. this pin can be combined with vc2 and vcc pins, resulting in a single supply voltage (vc). vc2 14 power supply for second stage amplifier. the vc2 feedline should be terminated with a 220pf bypass capacitor as close to the device as possible, followe d by a 1f bypass capacitor at the supply side. this pin can be combined with vc1 and vcc, resulting in a single supply voltage (vc). gnd center metal the center metal base of the mlpq package provides both dc/rf ground as well as heat sink for the power amplifier. p p a a c c k k a a g g e e d d a a t t a a
lx5503e p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 3 www. microsemi . com ingap hbt 4 ? 6ghz power amplifier integrated products copyright ? 2000 rev. 1.2, 2004-01-16 electrical characteristics unless otherwise specified, the following specifications apply over the following test conditions: vcc = 3.3v, icq = 100ma, t a = 25c parameter condition symbol min. typ. max. min. typ. max. unit frequency range f 4.9 5.35 5.7 5.85 ghz output power at 1db compression pout 25 26 25 26 dbm power gain at pout=18dbm gp 21 16 db evm at pout=18dbm 64qam/54mbps 3 3 % total current at pout=18dbm ic_total 150 160 ma quiescent current icq 100 100 ma bias control reference current for icq=100ma iref 1.5 1.5 ma small-signal gain s21 19 15 db gain flatness over 200mhz ? s21 +/-0.5 +/-0.5 db gain variation over temperature -40 to +85 o c ? s21 +/-1 +/-1 db input return loss s11 -15 -10 -12 -10 db output return loss s22 -7 -8 db reverse isolation s12 -35 -35 db second harmonic pout = 18dbm -40 -35 dbc third harmonic pout = 18dbm -45 -45 dbc ramp-on time 10~90% t on 100 100 ns e e l l e e c c t t r r i i c c a a l l s s
lx5503e p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 4 www. microsemi . com ingap hbt 4 ? 6ghz power amplifier integrated products copyright ? 2000 rev. 1.2, 2004-01-16 characteristic curves typical evm & total current vs. output power (vc=3.3v, icq=100ma, 64qam/54mbps) 8 9 10 11 12 13 14 15 16 17 18 19 20 21 pout (dbm) 0 1 2 3 4 5 6 7 8 9 10 evm (%) 100 110 120 130 140 150 160 170 180 190 200 ictotal (ma) ev m ictotal freq=4.97ghz (evm test set limited to >4.97ghz) 8 9 10 11 12 13 14 15 16 17 18 19 20 21 pout (dbm) 0 1 2 3 4 5 6 7 8 9 10 evm (%) 100 110 120 130 140 150 160 170 180 190 200 ictotal (ma) ev m ictotal freq=5.25ghz 8 9 10 11 12 13 14 15 16 17 18 19 20 21 pout (dbm) 0 1 2 3 4 5 6 7 8 9 10 11 12 evm (%) 100 110 120 130 140 150 160 170 180 190 200 210 220 ictotal (ma) ev m ictotal freq=5.85ghz notes: all evm data are fo r ofdm signal of 64qam/54mbps and are actual measur ed data without any de-embedding. source evm from is around 1.4~1.8% for the input power levels for test. g g r r a a p p h h s s
lx5503e p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 5 www. microsemi . com ingap hbt 4 ? 6ghz power amplifier integrated products copyright ? 2000 rev. 1.2, 2004-01-16 characteristic curves typical power sweep data at room temperature (vc=3.3v, icq=100ma) freq=4.97ghz freq=5.25ghz freq=5.85ghz g g r r a a p p h h s s
lx5503e p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 6 www. microsemi . com ingap hbt 4 ? 6ghz power amplifier integrated products copyright ? 2000 rev. 1.2, 2004-01-16 characteristic curves typical evm vs. frequency (vc=3.3v, icq=100ma, p out=18dbm, 64qam/54mbps) 4.85 4.95 5.05 5.15 5.25 5.35 5.45 5.55 5.65 5.75 5.85 frequency (ghz) 2.5 2.75 3 3.25 3.5 3.75 4 evm (%) evm typical p1db vs. supply voltage (vc=3.3v, icq=100ma, freq=5.25ghz) 3 3.2 3.4 3.6 3.8 4 vc (v) 24 24.5 25 25.5 26 26.5 27 27.5 28 p1db (dbm) typical p1db vs. frequency (vc=3.3v, icq=100ma) 4.85 4.95 5.05 5.15 5.25 5.35 5.45 5.55 5.65 5.75 5.85 frequency (ghz) 24 24.5 25 25.5 26 26.5 27 p1db (dbm) typical small-signal gain vs. supply voltage (vc=3.3v, icq=100ma, freq=5.25ghz) 3 3.2 3.4 3.6 3.8 4 vc (v) 20 20.25 20.5 20.75 21 s21@5.25ghz (db) typical s-parameter data at room temperature (vc=3.3v, icq=100ma) 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 4.0 6.0 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 -45 25 freq, ghz db(s (1,1)) db(s (1,2)) db(s (2,1)) db(s (2,2)) typical small-signal gain variation over temperature (vc=3.3v, icq=100ma at room temperature) 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 4.0 6.0 11 12 13 14 15 16 17 18 19 20 21 22 23 10 24 fre q, ghz -40 o c -20 o c 0 o c 25 o c 85 o c s21 (db) - - g g r r a a p p h h s s
lx5503e p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 7 www. microsemi . com ingap hbt 4 ? 6ghz power amplifier integrated products copyright ? 2000 rev. 1.2, 2004-01-16 characteristic curves typical evm variation over temperature (vc=3.3v, icq=100ma at room temper ature, pout=18db m, freq=5.25ghz) 13 14 15 16 17 18 19 20 21 pout (dbm) 0 1 2 3 4 5 6 7 8 9 10 evm (%) -40 o c -25 o c 0 o c 25 o c 50 o c 85 o c typical acpr variation over temperature (vc=3.3v, icq=100ma at room temper ature, pout=18db m, freq=5.25ghz) 13 14 15 16 17 18 19 20 21 pout (dbm) -60 -55 -50 -45 -40 acpr@30mhz (dbc) -40 o c -25 o c 0 o c 25 o c 50 o c 85 o c g g r r a a p p h h s s
lx5503e p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 8 www. microsemi . com ingap hbt 4 ? 6ghz power amplifier integrated products copyright ? 2000 rev. 1.2, 2004-01-16 package dimensions lq 16-pin mlpq 3x3 (67x67 mil dap) e d e b e2 d2 a a3 a1 l k m illimeters i nches dim min max min max a 0.80 1.00 0.031 0.039 a1 0 0.05 0 0.002 a3 0.20 ref 0.008 ref b 0.18 0.30 0.007 0.012 d 3.00 bsc 0.118 bsc e 3.00 bsc 0.118 bsc e 0.50 bsc 0.020 bsc d2 1.30 1.55 0.051 0.061 e2 1.30 1.55 0.051 0.061 k 0.2 - 0.008 - l 0.35 0.50 0.012 0.020 note: 1. dimensions do not include mold flash or protrusions; these shall not exceed 0. 155mm(.006?) on any side. lead dimension shal l not include solder coverage. m m e e c c h h a a n n i i c c a a l l s s
lx5503e p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 9 www. microsemi . com ingap hbt 4 ? 6ghz power amplifier integrated products copyright ? 2000 rev. 1.2, 2004-01-16 notes production data ? information contained in this document is proprietary to microsemi and is current as of application date. this document may not be modified in any way without the express written consent of microsemi. product processing does not necessarily include testing of all parameters. microsemi reserves the right to change the configuration and performance of the product and to discontinue p roduct at an y time. n n o o t t e e s s
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